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Established in 2001, Puyang Zhong Yuan Restar Petroleum Equipment Co.,Ltd, “RSD” for short, is Henan’s high-tech enterprise with intellectual property advantages and independent legal person qualification. With registered capital of RMB 50 million, the Company has two subsidiaries-Henan Restar Separation Equipment Technology Co., Ltd We are mainly specialized in R&D, production and service of various intelligent separation and control systems in oil&gas drilling,engineering environmental protection and mining industries.We always take the lead in Chinese market shares of drilling fluid shale shaker for many years. Our products have been exported more than 20 countries and always extensively praised by customers. We are Class I network supplier of Sinopec,CNPC and CNOOC and registered supplier of ONGC, OIL India,KOC. High quality and international standard products make us gain many Large-scale drilling fluids recycling systems for Saudi Aramco and Gazprom projects.

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PD - 94816 IRF4905PbF
PD - 94816 IRF4905PbF

ID @ TC = 25°C Continuous ,Drain Current,, VGS @ -10V -74 ID @ TC = 100°C Continuous ,Drain Current,, VGS @ -10V -52 A IDM ,Pulsed Drain Current, -260 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 930 mJ IAR Avalanche ,Current, -38 A EAR Repetitive Avalanche Energy 20 mJ

TPIC6B595 Power Logic 8-Bit Shift Register datasheet (Rev. B)
TPIC6B595 Power Logic 8-Bit Shift Register datasheet (Rev. B)

ID ,Pulsed drain current,, each output, all outputs ON, TC = 25°C(4) 0 500 mA I D Continuous ,drain current,, each output, all outputs ON, T C = 25°C (4) 0 150 mA I DM Peak ,drain current, …

NTMFS5C430NL MOSFET – Power Single N-Channel
NTMFS5C430NL MOSFET – Power Single N-Channel

Pulsed Drain Current TA = 25°C, tp = 10 s IDM 900 A Operating Junction and Storage Temperature TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS 120 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 15 A) EAS 493 mJ Single Pulse Drain−to−Source Voltage (tp = 10 s) VDSM 48 V Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Pulsed Drain Current @V
Pulsed Drain Current @V

Pulsed Drain Current, @V A G=10V ,Pulsed, Avalanche Energy Gate-to-Source Voltage Parameter ,Drain,-to-Source Voltage Continuous ,Drain Current, VDSS RDS(ON)(MAX) EAS Single Pulse Avalanche Energy (L=1mH) 00 mJ DQG

transistors - pulsed current with 200 kHz squarewave ...
transistors - pulsed current with 200 kHz squarewave ...

Why ,pulsed drain current, is higher than continuous ,drain current, in MOSFETs? 1. How to drive luxeon Rebel LED. 1. Why does my ground ,current, look like this (and why is my ,current, so low)? 0. N-mosfet low-side switch being turned on with no direct gate drive signal. 1.

Pulsed Drain Current : A Highly Sensitive Technique for ...
Pulsed Drain Current : A Highly Sensitive Technique for ...

Corpus ID: 22966146. ,Pulsed Drain Current, : A Highly Sensitive Technique for Interface Characterization in VLSI MOSFET's @article{Haddara1993PulsedDC, title={,Pulsed Drain Current, : A Highly Sensitive Technique for Interface Characterization in VLSI MOSFET's}, author={H. Haddara}, journal={ESSDERC '93: 23rd European solid State Device Research Conference}, year={1993}, pages={425-428} }

deloplen.com
deloplen.com

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DC and Pulsed IV Chracteristics of GaAs MESFET Devices
DC and Pulsed IV Chracteristics of GaAs MESFET Devices

As a check on the self-heating issue considered previously, the ,drain current, of the device was monitored with an oscilloscope as the ,drain, source and gate source junctions were ,pulsed, from the static point of V gs = -1 V, V ds = 0 V to the dynamic point of v gs = 0 V, v ds = 4 V.

SCT2H12NY - Digi-Key
SCT2H12NY - Digi-Key

Pulsed drain current ID,pulse *2 10 A Gate - Source voltage (DC) VGSS 6 to 22 V Drain - Source voltage VDSS 1700 V Continuous drain current Tc= 25°C ID *1 4A Tc= 100°C ID *1 2.9 A Unit Taping code TB Marking SCT2H12NY Absolute maximum ratings (Ta = 25°C) Parameter Symbol Value Packaging specifications Type Packing Embossed tape Application Reel size (mm) 330

(PDF) Understanding pulsed IV measurement waveforms
(PDF) Understanding pulsed IV measurement waveforms

The model can accurately calculate the pulsed IV (PIV) drain-current over a large range of time instants, while simultaneously providing excellent predication of the DC drain characteristics.

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Road West, North Branch, Jingkai Road, Puyang City