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horizontal multistage sand cleaning pump kit

Established in 2001, Puyang Zhong Yuan Restar Petroleum Equipment Co.,Ltd, “RSD” for short, is Henan’s high-tech enterprise with intellectual property advantages and independent legal person qualification. With registered capital of RMB 50 million, the Company has two subsidiaries-Henan Restar Separation Equipment Technology Co., Ltd We are mainly specialized in R&D, production and service of various intelligent separation and control systems in oil&gas drilling,engineering environmental protection and mining industries.We always take the lead in Chinese market shares of drilling fluid shale shaker for many years. Our products have been exported more than 20 countries and always extensively praised by customers. We are Class I network supplier of Sinopec,CNPC and CNOOC and registered supplier of ONGC, OIL India,KOC. High quality and international standard products make us gain many Large-scale drilling fluids recycling systems for Saudi Aramco and Gazprom projects.

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horizontal multistage sand cleaning pump kit
TPIC6B595 Power Logic 8-Bit Shift Register datasheet (Rev. B)
TPIC6B595 Power Logic 8-Bit Shift Register datasheet (Rev. B)

ID Pulsed drain current, each output, all outputs ON, TC = 25°C(4) 0 500 mA I D Continuous drain current, each output, all outputs ON, T C = 25°C (4) 0 150 mA I DM …

Power Logic Octal D-Type Latch datasheet (Rev. A)
Power Logic Octal D-Type Latch datasheet (Rev. A)

Pulsed drain, output ,current,, T C = 25°C, VCC = 5 V (see Notes 3 and 5) –1.8 1.5 A Setup time, D high before CLK ↑, tsu (see Figure 2) 10 ns Hold time, D high after CLK ↑, th (see Figure 2) 15 ns Pulse duration, t w (see Figure 2) 25 ns Operating case temperature, T C –40 125 °C

CSD19536KTT: Pulsed Drain Current for <10us - Power ...
CSD19536KTT: Pulsed Drain Current for <10us - Power ...

For CSD19536KTT, IDM (,pulsed drain current,) is 400A <100us. Is there any way to check for IDM for <10us? The reason is that my customer is looking at 500A-600A …

SCT3080AL : SiC Power Devices
SCT3080AL : SiC Power Devices

Pulsed drain current ID,pulse *2 75 A Continuous drain current Tc = 25°C ID *1 30 A Gate - Source voltage VGSS 4 to 22 V Junction temperature Tj 175 °C Gate-Source Surge Voltage VGSS_surge 4 to 22 V Recommended Drive Voltage VGS_op 0 / 18 V Range of storage temperature Tstg 55 to 175 °C (1) Gate (2) Drain (3) Source *1 Body Diode (1) (3) (2) *1

transistors - pulsed current with 200 kHz squarewave ...
transistors - pulsed current with 200 kHz squarewave ...

Why ,pulsed drain current, is higher than continuous ,drain current, in MOSFETs? 1. How to drive luxeon Rebel LED. 1. Why does my ground ,current, look like this (and why is my ,current, so low)? 0. N-mosfet low-side switch being turned on with no direct gate drive signal. 1.

PD - 94816 IRF4905PbF
PD - 94816 IRF4905PbF

ID @ TC = 25°C Continuous ,Drain Current,, VGS @ -10V -74 ID @ TC = 100°C Continuous ,Drain Current,, VGS @ -10V -52 A IDM ,Pulsed Drain Current, -260 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 930 mJ IAR Avalanche ,Current, -38 A EAR Repetitive Avalanche Energy 20 mJ

DC and Pulsed IV Chracteristics of GaAs MESFET Devices
DC and Pulsed IV Chracteristics of GaAs MESFET Devices

As a check on the self-heating issue considered previously, the ,drain current, of the device was monitored with an oscilloscope as the ,drain, source and gate source junctions were ,pulsed, from the static point of V gs = -1 V, V ds = 0 V to the dynamic point of v gs = 0 V, v ds = 4 V.

Trapping phenomena in AlGaN/GaN HEMTs: a study based on ...
Trapping phenomena in AlGaN/GaN HEMTs: a study based on ...

high negative gate voltages (gate lag), or to high ,drain, voltage levels (,drain, lag), in off-state. Several techniques have been proposed for the analysis of ,current, collapse, and for the study of the properties of the trap levels responsible for this phenomenon: (i) ,pulsed drain current, versus ,drain, voltage (I D–V) measurements, carried

Finances in Germany - Expat Guide to Germany | Expatica
Finances in Germany - Expat Guide to Germany | Expatica

Learn everything an expat should know about managing ,finances in Germany,, including bank accounts, paying taxes, getting insurance and investing.

N-Channel MOSFET
N-Channel MOSFET

Pulsed Drain Current, (mA) 23 ,Drain, to Source Voltage (V) Fig. 1 - Output Characteristics 041 3 10 100 1 200 VDS= 3V TA=25°C Pulesd ,Drain Current, (mA) 2 Gate To Source Voltage (V) Fig. 2 - Transfer Characteristics 10 1 50 1 100 200 TA=25°C ,Pulsed, 10 ,Drain Current, (A) ,Drain,-Source On-Resistance (Ω) Fig. 3 - RDS(ON)—ID VGS=4V VGS=2.5V 3 6 9 ...

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