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Established in 2001, Puyang Zhong Yuan Restar Petroleum Equipment Co.,Ltd, “RSD” for short, is Henan’s high-tech enterprise with intellectual property advantages and independent legal person qualification. With registered capital of RMB 50 million, the Company has two subsidiaries-Henan Restar Separation Equipment Technology Co., Ltd We are mainly specialized in R&D, production and service of various intelligent separation and control systems in oil&gas drilling,engineering environmental protection and mining industries.We always take the lead in Chinese market shares of drilling fluid shale shaker for many years. Our products have been exported more than 20 countries and always extensively praised by customers. We are Class I network supplier of Sinopec,CNPC and CNOOC and registered supplier of ONGC, OIL India,KOC. High quality and international standard products make us gain many Large-scale drilling fluids recycling systems for Saudi Aramco and Gazprom projects.

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what is the largest pump in 20 sand tube wells
A two-dimensional numerical simulation of pulsed drain ...
A two-dimensional numerical simulation of pulsed drain ...

Based on two-dimensional (2-D) numerical simulation, a ,pulsed-drain current, (PDC) measurement technique in weak inversion is investigated as an alternative to the standard charge-pumping technique for the extraction of interface trap density using small geometry MOSFETs. The PDC technique was found particularly useful for small MOSFETs with sub-20 /spl Aring/ oxides to …

High pulsed current density β-Ga2O3 MOSFETs verified by an ...
High pulsed current density β-Ga2O3 MOSFETs verified by an ...

Pulsed, family of ,drain current, curves (symbols) for a high ,current, density β-Ga 2 O 3 MOSFET. The maximum ,current, density measured was 478 mA/mm. The device operates very close to theoretical values shown using an analytical electrostatic model (blue lines). Gate dispersion was avoided by measuring from the on to off states.

P-Channel 100 V (D-S) MOSFET
P-Channel 100 V (D-S) MOSFET

Pulsed Drain Current, IDM - 15 Avalanche ,Current, IAS - 18 Single Avalanche Energy a L = 0.1 mH E AS 16.2 mJ Maximum Power Dissipation a T C = 25 °C P D 32.1 b W T A = 25 °C c 2.5 Operating Junction and Storage Temperature Range T J, T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit

N-Channel MOSFET
N-Channel MOSFET

Pulsed Drain Current, (mA) 23 ,Drain, to Source Voltage (V) Fig. 1 - Output Characteristics 041 3 10 100 1 200 VDS= 3V TA=25°C Pulesd ,Drain Current, (mA) 2 Gate To Source Voltage (V) Fig. 2 - Transfer Characteristics 10 1 50 1 100 200 TA=25°C ,Pulsed, 10 ,Drain Current, (A) ,Drain,-Source On-Resistance (Ω) Fig. 3 - RDS(ON)—ID VGS=4V VGS=2.5V 3 6 9 ...

Power Logic Octal D-Type Latch datasheet (Rev. A)
Power Logic Octal D-Type Latch datasheet (Rev. A)

Pulsed drain, output ,current,, T C = 25°C, VCC = 5 V (see Notes 3 and 5) –1.8 1.5 A Setup time, D high before CLK ↑, tsu (see Figure 2) 10 ns Hold time, D high after CLK ↑, th (see Figure 2) 15 ns Pulse duration, t w (see Figure 2) 25 ns Operating case temperature, T C –40 125 °C

Pulsed drain current I DP 1 6 6 A Gate Source voltage V V ...
Pulsed drain current I DP 1 6 6 A Gate Source voltage V V ...

Pulsed drain current, i dp 1 6 6 a gate source voltage. School Waikato University; Course Title ENGG 311; Uploaded By BrigadierSummer6498. Pages 31 This preview shows page 10 - …

Power MOSFET Basics - IXYS Corporation
Power MOSFET Basics - IXYS Corporation

drain current and is bounded by a positive slope line defined by the Rds (on) of the device. The right hand side of each line is terminated at the rated drain-to-source voltage limit (Vdss). Each line has a negative slope and is determined by the maximum allowed power dissipation of the device Pd: Pd = [TJ (max) – TC] / ZthJC = VDS ID Equation (6)

RQ5H020SP : Transistors
RQ5H020SP : Transistors

Continuous ,drain current, ID *1 2.0 A ,Pulsed drain current, ID,pulse *2 8.0 A ,Drain, - Source voltage VDSS 45 V Taping code TL Marking FB Absolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Packaging specifications Type Packaging Taping Application Reel size (mm) 180 DC/DC converters Tape width (mm) 8 Basic ordering unit (pcs) 3,000

CSD19536KTT: Pulsed Drain Current for <10us - Power ...
CSD19536KTT: Pulsed Drain Current for <10us - Power ...

For CSD19536KTT, IDM (,pulsed drain current,) is 400A <100us. Is there any way to check for IDM for <10us? The reason is that my customer is looking at 500A-600A for <10us. Hope to hear from you soon. Thanks.

transistors - pulsed current with 200 kHz squarewave ...
transistors - pulsed current with 200 kHz squarewave ...

Why ,pulsed drain current, is higher than continuous ,drain current, in MOSFETs? 1. How to drive luxeon Rebel LED. 1. Why does my ground ,current, look like this (and why is my ,current, so low)? 0. N-mosfet low-side switch being turned on with no direct gate drive signal. 1.

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